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PDQ2116 N+P Channel MOSFETs

PDQ2116 Description

20V N+P Dual Channel MOSFETs PDQ2116 General .
These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors are using trench DMOS technology.

PDQ2116 Features

* Fast switching
* Green Device Available

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Datasheet Details

Part number
PDQ2116
Manufacturer
Potens semiconductor
File Size
898.12 KB
Datasheet
PDQ2116-Potenssemiconductor.pdf
Description
N+P Channel MOSFETs

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N +P Channel MOSFETs Potens semiconductor
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