BULD125KC Datasheet - Power Innovations Limited

BULD125KC NPN Transistor

The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr antiparallel diode. The revolutionary design ensures that the diode has both.

BULD125KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright © 1997, Power Innovations Limited, UK MAY 1994 - REVISED SEPTEMBER 1997 q Designed Specifically for High Frequency Electronic Ballasts Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability Diode trr Typically 1 µs Tightly Controlled Transistor Storage Times Voltage Matched Integrated Transistor and Diode Characteristics Optimised for Cool Running Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability B.

BULD125KC Datasheet (167.30 KB)