BULD25 Datasheet - Power Innovations Limited

BULD25 NPN Transistor

The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of E switching transistors has tightly controlled storage times and an integrated fast trr anti-parallel diode. The revolutionary design ensures that the diode has b.

BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright © 1997, Power Innovations Limited, UK JULY 1994 - REVISED SEPTEMBER 1997 q Designed Specifically for High Frequency Electronic Ballasts Integrated Fast trr Anti-parallel Diode, Enhancing Reliability Diode trr Typically 500 ns New Ultra Low-Height SOIC Power Package Tightly Controlled Transistor Storage Times Voltage Matched Integrated Transistor and Diode Characteristics Optimised for Cool Running B B NC NC E D.

BULD25 Features

* 3 Places 0,50 (0.020) x 45°NOM 0,25 (0.010) 5,21 (0.2

BULD25 Datasheet (277.67 KB)