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BULD118 Datasheet - STMicroelectronics

BULD118 NPN Transistor

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in l.

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BULD118 BULD118 NPN Transistor STMicroelectronics

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