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BULD25D Datasheet - Power Innovations Limited

BULD25D - NPN Transistor

The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s).

This range of E switching transistors has tightly controlled storage times and an integrated fast trr anti-parallel diode.

The revolutionary design ensures that the diode has b

BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright © 1997, Power Innovations Limited, UK JULY 1994 - REVISED SEPTEMBER 1997 q Designed Specifically for High Frequency Electronic Ballasts Integrated Fast trr Anti-parallel Diode, Enhancing Reliability Diode trr Typically 500 ns New Ultra Low-Height SOIC Power Package Tightly Controlled Transistor Storage Times Voltage Matched Integrated Transistor and Diode Characteristics Optimised for Cool Running B B NC NC E D

BULD25D Features

* 3 Places 0,50 (0.020) x 45°NOM 0,25 (0.010) 5,21 (0.2

BULD25D_PowerInnovationsLimited.pdf

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Datasheet Details

Part number:

BULD25D

Manufacturer:

Power Innovations Limited

File Size:

277.67 KB

Description:

Npn transistor.

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