QL67F6S-B, QL67F6S-A Datasheet (QSI)

QL67F6S-B, QL67F6S-A, LASER DIODE

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer :.

Model : QL67F6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL67F6S-A/B/C InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd.

Ver 1.

July.

2008 OVERVIEW QL67F6S-A/B/C is a MOCVD grown 670nm band Gain-Guided type InGaAlP laser diode with quantum well structure.

It's an attractive light source

QL67F6S-B Features

* - Visible Light Output : λp = 670 nm - Optical Power Output : 10mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode

* ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode