H11A817C Datasheet - QT Optoelectronics

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

H11A817C Features

* 0 to 15° s s .200 (5.10) MAX .158 (4.01) .144 (3.68) .020 (.51) MIN .154 (3.90) .120 (3.05) Compact 4-pin package Current transfer ratio in selected groups: H11AA814: 20-300% H11AA814A: 50-150% H11A817: H11A817A: H11A817B: H11A817C: H11A817D: 50-600% 80-160% 130-260% 200-400% 300-600% .022 (.56)

H11A817C General Description

The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. .380 (9.64) MAX .012 (.30) .007 (.20) .055 (1.40) .047 (1.20) 4 3 .270 (6.86) .248 (6.30) .327.

H11A817C Datasheet (30.01 KB)

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Datasheet Details

Part number:

H11A817C

Manufacturer:

QT Optoelectronics

File Size:

30.01 KB

Description:

4-pin phototransistor optocouplers.

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H11A817C 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS QT Optoelectronics

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H11A817C Features

H11A817C General Description

Datasheet Details

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Description:

H11A817C Distributor