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HYB18T512161B2F-20

512-Mbit x16 DDR2 SDRAM

HYB18T512161B2F-20 Features

* The 512-Mbit Double-Data-Rate-Two SDRAM offers the following key features:

* Data masks (DM) for write data

* 1.8 V ± 0.1V VDD for [

* 20/

* 25]

* 1.8 V ± 0.1V VDDQ for [

* 20/

* 25]

* Posted CAS by programmable additive latency for better

HYB18T512161B2F-20 General Description

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a single ended DQS or differential DQS-DQS pair in a source synchrono.

HYB18T512161B2F-20 Datasheet (1.30 MB)

Preview of HYB18T512161B2F-20 PDF

Datasheet Details

Part number:

HYB18T512161B2F-20

Manufacturer:

Qimonda AG

File Size:

1.30 MB

Description:

512-mbit x16 ddr2 sdram.
June 2007 www.DataSheet4U.com HYB18T512161B2F

*20/25 512-Mbit x16 DDR2 SDRAM DDR2 SDRAM RoHS compliant Internet Data Sheet Rev. 1.1 Interne.

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HYB18T512161B2F-20 512-Mbit x16 DDR2 SDRAM Qimonda AG

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