* S (2) Marking UF4SC120030K4S w On-resistance RDS(on): 30mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 277nC w Low body diode VFSD: 1.22V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w E
UF4SC120030K4S Datasheet (846.32 KB)
UF4SC120030K4S
Qorvo
846.32 KB
Sic jfet.
DATASHEET
UF4SC120030K4S
CASE
CASE D (1)
Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 1200 V, 30 mohm
Rev. B, January 2.
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