UF4SC120030K4S Datasheet - Qorvo

SiC JFET

UF4SC120030K4S Features

* S (2) Marking UF4SC120030K4S w On-resistance RDS(on): 30mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 277nC w Low body diode VFSD: 1.22V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w E

UF4SC120030K4S General Description

The UF4SC120030K4S is a 1200V, 30mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” .

UF4SC120030K4S Datasheet (846.32 KB)

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UF4SC120030K4S

Manufacturer:

Qorvo

File Size:

846.32 KB

Description:

Sic jfet.
DATASHEET UF4SC120030K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 1200 V, 30 mohm Rev. B, January 2.

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UF4SC120030K4S SiC JFET Qorvo

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UF4SC120030K4S Features

UF4SC120030K4S General Description

Datasheet Details

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