Datasheet Specifications
- Part number
- UF4SC120030K4S
- Manufacturer
- Qorvo
- File Size
- 846.32 KB
- Datasheet
- UF4SC120030K4S-Qorvo.pdf
- Description
- SiC JFET
Description
DATASHEET UF4SC120030K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 1200 V, 30 mohm Rev.B, January 2.Features
* S (2) Marking UF4SC120030K4S w On-resistance RDS(on): 30mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 277nC w Low body diode VFSD: 1.22V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w EApplications
* w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF4SC120030K4S Rev. B, January 2025 1 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2 SinUF4SC120030K4S Distributors
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