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UF4SC120030K4S - SiC JFET

UF4SC120030K4S Description

DATASHEET UF4SC120030K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 1200 V, 30 mohm Rev.B, January 2.
The UF4SC120030K4S is a 1200V, 30mW G4 SiC FET.

UF4SC120030K4S Features

* S (2) Marking UF4SC120030K4S w On-resistance RDS(on): 30mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 277nC w Low body diode VFSD: 1.22V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w E

UF4SC120030K4S Applications

* w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF4SC120030K4S Rev. B, January 2025 1 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2 Sin

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Datasheet Details

Part number
UF4SC120030K4S
Manufacturer
Qorvo
File Size
846.32 KB
Datasheet
UF4SC120030K4S-Qorvo.pdf
Description
SiC JFET

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SiC JFET Qorvo
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