UF4SC120023B7S 1200V SiC Cascode JFET

UnitedSiC

Description

DATASHEET UF4SC120023B7S Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, D2PAK-7L, 1200 V, 23 mohm Rev.B, January 2025 .
Tab 1 7 G (1) KS (2) D (Tab) S (3-7) Part Number UF4SC120023B7S Package D2PAK-7L Marking UF4SC120023B7S The UF4SC120023B7S is a 1200V, 23mΩ G4.

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Datasheet Specifications

Part number: UF4SC120023B7S
Manufacturer: UnitedSiC
File Size: 1.42 MB
Datasheet: UF4SC120023B7S-UnitedSiC.pdf
Description: 1200V SiC Cascode JFET

Features

* w On-resistance RDS(on): 23mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 243 nC w Low body diode VFSD: 1.2V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and C

Applications

* w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Induction heating Datasheet: UF4SC120023B7S Rev. B, January 2025 1 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2 Single pulsed aval

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UF4SC120023B7S 1200V SiC Cascode JFET UnitedSiC

UnitedSiC UF4SC120023B7S-like datasheet

UF4SC120023K4S