* S (2) Marking UF4SC120023K4S w On-resistance RDS(on): 23mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 341nC w Low body diode VFSD: 1.2V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ES
UF4SC120023K4S Datasheet (936.56 KB)
UF4SC120023K4S
UnitedSiC
936.56 KB
1200v sic cascode jfet.
DATASHEET
UF4SC120023K4S
CASE
CASE D (1)
Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 1200 V, 23 mohm
Rev. B, January 2.
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