UF4SC120023K4S Datasheet - UnitedSiC

1200V SiC Cascode JFET

UF4SC120023K4S Features

* S (2) Marking UF4SC120023K4S w On-resistance RDS(on): 23mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 341nC w Low body diode VFSD: 1.2V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ES

UF4SC120023K4S General Description

The UF4SC120023K4S is a 1200V, 23mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” .

UF4SC120023K4S Datasheet (936.56 KB)

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UF4SC120023K4S

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UnitedSiC

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936.56 KB

Description:

1200v sic cascode jfet.
DATASHEET UF4SC120023K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 1200 V, 23 mohm Rev. B, January 2.

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UF4SC120023K4S 1200V SiC Cascode JFET UnitedSiC

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UF4SC120023K4S Features

UF4SC120023K4S General Description

Datasheet Details

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UF4SC120023K4S Distributor