* of this device include linear gain control, high gain, and high linearity. The IC is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process and is featured in an industry-standard miniature 6-lead plastic SOT package. 1.80 1.40 .50 .35 3.10 2.70 .10 MAX. 4
RF2381
RF Micro Devices
102.11 KB
Pcs/cellular tdma/cdma/w-cdma linear variable gain amplifier.
RF2381 4 Typical Applications CDMA PCS/Cellular Handsets TDMA PCS/Cellular Handsets W-CDMA Handsets PCS/CELLULAR TDMA/CD.
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