SGB2400 Datasheet - RF Micro Devices

SGB2400 DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER

RFMD’s SGB2400 is a high performance Darlington SiGe HBT MMIC amplifier with on-chip active bias circuitry. The active bias network provides stable current over temperature and process Beta variations. The SGB2400 is designed to operate directly from a 3V supply. The SGB2400 product is designed for .

SGB2400 Features

* High Reliability SiGe HBT Technology

* Robust Class 1C ESD

* P1dB = 6.9dBm at 1950MHz

* IP3 = 18.0dBm at 1950MHz

* Die Size: 0.75mm x 0.70mm Applications

* LO Buffer Amp

* RF Pre-driver and RF Receive Path

* Military Communications

* Test and Instrumentation Pa

SGB2400-RFMicroDevices.pdf

SGB2400 Datasheet Preview — Preview of SGB2400 PDF

Datasheet Details

Part number:

SGB2400

Manufacturer:

RF Micro Devices

File Size:

113.83 KB

Description:

Dc to 4ghz active bias sige hbt mmic amplifier.

SGB2400 Distributor

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SGB2400 SGB2400 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER RF Micro Devices