SGB2400 DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER

RF Micro Devices

Description

SGB2400DC to 4GHz Active Bias SiGe HBT MMIC Amplifier SGB2400 DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER Package: Bare Die Product .
RFMD’s SGB2400 is a high performance Darlington SiGe HBT MMIC amplifier with on-chip active bias circuitry.

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SGB2400 Datasheet Preview — Preview of SGB2400 PDF

Datasheet Specifications

Part number: SGB2400
Manufacturer: RF Micro Devices
File Size: 113.83 KB
Datasheet: SGB2400-RFMicroDevices.pdf
Description: DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER

Features

* High Reliability SiGe HBT Technology
* Robust Class 1C ESD
* P1dB = 6.9dBm at 1950MHz
* IP3 = 18.0dBm at 1950MHz

Applications

* that require small size and minimal external components. The die is internally matched to 50. RFMD can provide 100% DC screening, visual inspection, and Hi-Rel wafer qualification. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS
* SiGe HBT GaAs pH

SGB2400 Distributors

📁 Related Datasheet

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SGB2400 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER RF Micro Devices

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