SGB2400 Datasheet, Amplifier, RF Micro Devices

SGB2400 Features

• Amplifier
• High Reliability SiGe HBT Technology
• Robust Class 1C ESD
• P1dB = 6.9dBm at 1950MHz
• IP3 = 18.0dBm at 1950MHz
• Die Size: 0.75mm x 0.70mm Ap

PDF File Details

Part number:

SGB2400

Manufacturer:

RF Micro Devices

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113.83kb

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📄 Datasheet

Description:

Dc to 4ghz active bias sige hbt mmic amplifier. RFMD’s SGB2400 is a high performance Darlington SiGe HBT MMIC amplifier with on-chip active bias circuitry. The active bias network p

SGB2400 Application

• Applications that require small size and minimal external components. The die is internally matched to 50. RFMD can provide 100% DC screening, vis

TAGS

SGB2400

RF Micro Devices

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