SGB2400 - DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER
RFMD’s SGB2400 is a high performance Darlington SiGe HBT MMIC amplifier with on-chip active bias circuitry.
The active bias network provides stable current over temperature and process Beta variations.
The SGB2400 is designed to operate directly from a 3V supply.
The SGB2400 product is designed for
SGB2400 Features
* High Reliability SiGe HBT Technology
* Robust Class 1C ESD
* P1dB = 6.9dBm at 1950MHz
* IP3 = 18.0dBm at 1950MHz
* Die Size: 0.75mm x 0.70mm Applications
* LO Buffer Amp
* RF Pre-driver and RF Receive Path
* Military Communications
* Test and Instrumentation Pa
