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SGB20N60 Fast S-IGBT in NPT-technology

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Description

SGP20N60 SGB20N60, SGW20N60 Fast S-IGBT in NPT-technology * 75% lower Eoff compared to previous generation combined with low conduction losse.

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Applications

* offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability C G E Type SGP20N60 SGB20N60 SGW20N60 VCE IC VCE(sat) Tj Package 600V 20A 2.4V 150°C TO-220AB TO-263AB TO-247AC Maximum Ratings Parameter Collector-emitter voltage DC

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