S-IGBT Datasheet | Specifications & PDF Download

< DIPIPM > SLIMDIP-S TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  RC-IGBT inverter bridge for three phase DC-to-AC power

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CRG20T60A83L, CRG20T60A93L CRG20T60A83L CRG20T60A93L FS IGBT ，，。 RoHS 。 VCES IC VCE(sat) 600 V 20 A 1.66 V ● FS ，； ● ：VCE(sat),TYP=1.6

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SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu

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Xiner 1350V，25A，Trench-FS IGBT SP25N135T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, typ

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Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation

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Discrete IGBTs Silicon N-Channel IGBT GT50JR22 GT50JR22 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The pr

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Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

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http://www.fujielectric.com/products/semiconductor/ 6MBP15VSC060-50 IGBT Modules IGBT MODULE (V series) 600V / 15A / IPM Features Low-side IGBTs a

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Data Sheet HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S January 2000 File Number 4492.2 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated hig

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IKW75N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

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< DIPIPM > SLIMDIP-L TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  RC-IGBT inverter bridge for three phase DC-to-AC power

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SPECIFICATION Device Name : IGBT MODULE Type Name : 2MBI150U4B-120 Spec. No. : MS5F 6059 Mar. 09 ’05 S.Miyashita Mar. 09 ’05 T.Miyasaka K.Yamada

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www.DataSheet4U.com Agilent 2.5 Amp Output Current IGBT Gate Drive Optocoupler Data Sheet HCPL-3120 HCPL-J312 HCNW3120 Functional Diagram N/C 1 AN

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HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C VCES = 600 V IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions VCES VCGR V GE

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Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW20N120R3 Data sheet Industrial Power Control IHW20N120R3 Resonant Sw

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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HCPL-3020/HCPL-0302 0.4 Amp Output Current IGBT Gate Drive Optocoupler Data Sheet Description The HCPL-3020 and HCPL-0302 consist of a GaAsP LED opti

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IGBT High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKZ75N65EH5 650V DuoPack IGBT and diode Hig

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RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • Trench gate and thin wafer technology (G6H series) • Low collector to emitt

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