SGC-6289Z high performance SiGe HBT MMIC amplifier

RF Micro Devices

Description

NOT FOR NEW dB DESIGNS NOT FOR NEW DESIGNS SGC-6289Z 50MHz to 3500MHz SILICON GERMANIUM ACTIVE BIAS GAIN BLOCK Package: SOT-89 Product .
RFMD’s SGC-6289Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network.

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Datasheet Specifications

Part number: SGC-6289Z
Manufacturer: RF Micro Devices
File Size: 296.26 KB
Datasheet: SGC-6289Z-RFMicroDevices.pdf
Description: high performance SiGe HBT MMIC amplifier

Features

* Single Supply Operation: 5V at ID = 83mA
* No Dropping Resistor Required
* Patented Self Bias Circuitry
* Gain = 13.5dBm at 1950MHz
* P1dB = 19.2dBm at 1950MHz
* IP3 = 33.5dBm at 1950MHz

Applications

* that require small size and minimal external components. It is internally matched to 50. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS
* SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS Gain, RL & NF versus Frequency 30 20 S21

SGC-6289Z Distributors

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SGC-6289Z high performance SiGe HBT MMIC amplifier RF Micro Devices

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