SGC-6489Z high performance SiGe HBT MMIC amplifier

RF Micro Devices

Description

NOT FOR NEW dB DESIGNS SGC-6489Z 50MHz to 3500MHz Silicon Germanium Active Bias Gain Block NOT FOR NEW DESIGNS SGC-6489Z 50MHz to 3500MHz SILICON GE.
RFMD’s SGC-6489Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network.

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Datasheet Specifications

Part number: SGC-6489Z
Manufacturer: RF Micro Devices
File Size: 220.35 KB
Datasheet: SGC-6489Z-RFMicroDevices.pdf
Description: high performance SiGe HBT MMIC amplifier

Features

* Single Supply Operation: 5V at ID = 85mA
* No Dropping Resistor Required
* Patented Self Bias Circuitry
* Gain = 19.5dBm at 1950MHz
* P1dB = 19.2dBm at 1950MHz
* IP3 = 32.8dBm at 1950MHz

Applications

* that require small size and minimal external components. It is internally matched to 50. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS
* SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS Gain and Return Loss 30.0 VD = 5V, ID = 85

SGC-6489Z Distributors

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SGC-6489Z high performance SiGe HBT MMIC amplifier RF Micro Devices

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