SGC4363Z Datasheet - RF Micro Devices

SGC4363Z high performance SiGe HBT MMIC amplifier

RFMD’s SGC4363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC4363Z does not requi.

SGC4363Z Features

* Single Fixed 3V Supply

* No Dropping Resistor Required

* Patented Self-Bias Circuitry

* P1dB=12.4dBm at 1950MHz

* OIP3=26.5dBm at 1950MHz

* Robust 1000V ESD, Class 1C HBM Applications

* PA Driver Amplifier

* Cellular, PCS, GSM, UMTS, WCDMA

* IF Amplifier

* W

SGC4363Z Datasheet (306.39 KB)

SGC4363Z Datasheet Preview — Preview of SGC4363Z PDF

Datasheet Details

Part number:

SGC4363Z

Manufacturer:

RF Micro Devices

File Size:

306.39 KB

Description:

High performance sige hbt mmic amplifier.

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SGC4363Z high performance SiGe HBT MMIC amplifier RF Micro Devices

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