SGC4363Z high performance SiGe HBT MMIC amplifier

RF Micro Devices

Description

SGC4363Z 50MHz to 4000 MHz Active Bias Silicon Germanium Cascadable Gain Block SGC4363Z 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE G.
RFMD’s SGC4363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network.

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Datasheet Specifications

Part number: SGC4363Z
Manufacturer: RF Micro Devices
File Size: 306.39 KB
Datasheet: SGC4363Z-RFMicroDevices.pdf
Description: high performance SiGe HBT MMIC amplifier

Features

* Single Fixed 3V Supply
* No Dropping Resistor Required
* Patented Self-Bias Circuitry
* P1dB=12.4dBm at 1950MHz
* OIP3=26.5dBm at 1950MHz

Applications

* that require small size and minimal external components. It is internally matched to 50. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS
* SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Gain, RL (dB) Gain & Return Loss VD = 3V, ID = 54mA 30

SGC4363Z Distributors

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SGC4363Z high performance SiGe HBT MMIC amplifier RF Micro Devices

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