SXA-389 Datasheet - RF Micro Devices

SXA-389 MEDIUM POWER GaAs HBT AMPLIFIER

RFMD’s SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer.

SXA-389 Features

* Available in RFMD Green, RoHS Compliant, and Pb-Free (Z Part Number)

* On-Chip Active Bias Control, Single 5V Supply

* High Output 3rd Order Intercept:+42to+44dBm Typ.

* High P1dB :+25dBm Typ.

* High Gain:+19dB at 850MHz

* High Efficiency: Consumes O

SXA-389 Datasheet (333.58 KB)