20N681K Datasheet, Varistor, RFE

PDF File Details

Part number:

20N681K

Manufacturer:

RFE

File Size:

215.68kb

Download:

📄 Datasheet

Description:

(20nxxxk) metal oxide varistor.

TAGS

20N681K

RFE

📁 Related Datasheet

20N681K - (20NxxxK) Metal Oxide Varistor Curves (RFE)
.. METAL OXIDE VARISTOR Transient V-I Characteristics Curves 20mm V-I CHARACTERISTIC CURVE (for standard MOVs) 3000 2000 Max Leakage.

20N681K - Metal Oxide Varistor (HUAAN)
TMOV 20M(E,N)Series Metal Oxide Varistors Data Sheet Features ·TMOV integrated thermal protection device ·High peak surge current rating up to 10KA ·D.

20N680K - Metal Oxide Varistor (HUAAN)
TMOV 20M(E,N)Series Metal Oxide Varistors Data Sheet Features ·TMOV integrated thermal protection device ·High peak surge current rating up to 10KA ·D.

20N60 - 20A 600V N-channel Enhancement Mode Power MOSFET (ROUM)
20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the sel.

20N60 - IGBT (IXYS)
Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions.

20N60 - 600V N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 20N60 20A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using .

20N60 - N-Channel MOSFET (VBsemi)
20N60-VB 20N60-VB Datasheet N-Channel 650 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) at 25 °C Qg max. (nC) Qgs (.

20N60 - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel, SuperFET) 600 V, 20 A, 190 mW FCP20N60, FCPF20N60 Description SuperFET MOSFET is onsemi’s first generation of high voltage super−j.

20N60A - IGBT (IXYS)
Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions.

20N60A - N-channel MOSFET (JieJie)
Description JMP N-channel MOSFET Features  600V,20A  RDS(ON) = 0.3Ω (Typ.) @ VGS = 10V, ID =10A  Fast Switching  Improved dv/dt Capability  100% .