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SGB2400 - DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER

SGB2400 Description

SGB2400DC to 4GHz Active Bias SiGe HBT MMIC Amplifier SGB2400 DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER Package: Bare Die Product .
RFMD’s SGB2400 is a high performance Darlington SiGe HBT MMIC amplifier with on-chip active bias circuitry.

SGB2400 Features

* High Reliability SiGe HBT Technology
* Robust Class 1C ESD
* P1dB = 6.9dBm at 1950MHz
* IP3 = 18.0dBm at 1950MHz

SGB2400 Applications

* that require small size and minimal external components. The die is internally matched to 50. RFMD can provide 100% DC screening, visual inspection, and Hi-Rel wafer qualification. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS
* SiGe HBT GaAs pH

📥 Download Datasheet

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Datasheet Details

Part number
SGB2400
Manufacturer
RF Micro Devices
File Size
113.83 KB
Datasheet
SGB2400-RFMicroDevices.pdf
Description
DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER

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📌 All Tags

4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER RF Micro Devices
RF Micro Devices SGB2400-like datasheet