B1340 Datasheet - ROHM Electronics

B1340, 2SB1340

INCHANGE Semiconductor isc Product Specification www.DataSheet4U.com isc Silicon PNP Darlington Power Transistor 2SB1340 .
Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min). High DC Current Gain: hFE= 2000(Min)@ (VCE= -3V, IC= -2A). Complement to Type.

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Datasheet Details

Part number:

B1340

Manufacturer:

ROHM ↗ Electronics

File Size:

137.96 KB

Description:

2SB1340

Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak Coll

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