B1340 2SB1340

ROHM Electronics

Description

INCHANGE Semiconductor isc Product Specification www.DataSheet4U.com isc Silicon PNP Darlington Power Transistor 2SB1340 .
Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min). High DC Current Gain: hFE= 2000(Min)@ (VCE= -3V, IC= -2A). Complement to Type.

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Datasheet Specifications

Part number: B1340
Manufacturer: ROHM ↗ Electronics
File Size: 137.96 KB
Datasheet: B1340_ROHMElectronics.pdf
Description: 2SB1340

Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak Coll

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B1340 2SB1340 ROHM Electronics

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