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2SA2017 - Power Transistor

Features

  • 1) Low VCE(sat). (Typ.
  • 0.3V at IC/IB =.
  • 2 /.
  • 0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SC5574. !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits -80 -80 -5 -4 -6 30 150 -55~+150 Unit.

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Datasheet Details

Part number 2SA2017
Manufacturer ROHM
File Size 44.03 KB
Description Power Transistor
Datasheet download datasheet 2SA2017 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors Power Transistor (−80V, −4A) 2SA2017 !Features 1) Low VCE(sat). (Typ. –0.3V at IC/IB = −2 / −0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SC5574.
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