Part number:
2SC5876U3
Manufacturer:
File Size:
1.55 MB
Description:
Medium power transistor.
* 1)High speed switching. (Tf:Typ.:80ns at IC=500mA) 2)Low saturation voltage, typically (Typ.:150mV at IC=100mA, IB=10mA) 3)Strong discharge power for inductive load and capacitance load. 4)Complements the 2SA2088U3. lOutline SOT-323 SC-70 UMT3 lInner circuit Datasheet lApplic
2SC5876U3
1.55 MB
Medium power transistor.
📁 Related Datasheet
2SC5876 - Medium power transistor
(Rohm)
2SC5876
Medium power transistor (60V, 0.5A)
Parameter
VCEO IC
Value
60V 500mA
lFeatures
1)High speed switching. (Tf:Typ.:80ns at IC=500mA) 2)Low .
2SC5800 - NPN SILICON RF TRANSISTOR
(Renesas)
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5800
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FE.
2SC5801 - NPN TRANSISTOR
(NEC)
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5801
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD
FEATURES
• Low phase di.
2SC5802 - Silicon NPN Power Transistors
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Wide area .
2SC5802 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5802
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Wide.
2SC5803 - Silicon NPN Power Transistor
(Inchange Semiconductor Company)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5803
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Wide.
2SC5804 - SMALL-SIGNAL TRANSISTOR
(Isahaya Electronics Corporation)
..
〈SMALL-SIGNAL TRANSISTOR〉
2SC5804
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION
2SC5804 is a supe.
2SC5807 - Silicon NPN Transistor
(Isahaya Electronics Corporation)
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