Part number:
2SCR544P5
Manufacturer:
File Size:
1.78 MB
Description:
Middle power transistors.
* 1)Low saturation voltage,typically VCE(sat)=300mV(Max.) (IC/ IB=1A/50mA) 2)High speed switching lOutline SOT-89 SC-62 MPT3 lInner circuit Datasheet lApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specifications Part No. Package 2SCR544P5 SOT-89 (MPT3)
2SCR544P5
1.78 MB
Middle power transistors.
📁 Related Datasheet
2SCR544P - NPN Transistor
(ROHM)
2SCR544P
Middle Power Transistors (80V / 2.5A)
Parameter
VCEO IC
Value
80V 2.5A
lFeatures
1)Low saturation voltage,typically VCE(sat)=300mV(Max.) .
2SCR544D - NPN Transistor
(ROHM)
2SCR544P / 2SCR544D
NPN 2.5A 80V Middle Power Transistor
Datasheet
Parameter
VCEO IC
Value
80V 2.5A
lOutline
MPT3
Base Collector
Emitter
lFeature.
2SCR544R - NPN Transistor
(ROHM)
2SCR544R
NPN 2.5A 80V Middle Power Transistor
Datasheet
Parameter
VCEO IC
Value
80V 2.5A
lFeatures 1) Suitable for Middle Power Driver 2) Compleme.
2SCR542D - Midium Power Transistors
(ROHM)
Midium Power Transistors (30V / 5A)
2SCR542D
Structure NPN Silicon epitaxial planar transistor
Features 1) Low saturation voltage
VCE (sat) = 0.4.
2SCR542D - Silicon NPN Power Transistors
(Inchange Semiconductor)
isc Silicon NPN Power Transistors
DESCRIPTION ·DC Current Gain hFE :200-500@ IC= 0.5A ·Collector-Emitter Breakdown Voltage
: V(BR) CEO= 30V(Min) ·Min.
2SCR542F3 - Middle Power Transistors
(ROHM)
2SCR542F3
NPN 3.0A 30V Middle Power Transistor
Parameter VCEO
IC
Value 30V
3A
lFeatures
1) Suitable for Middle Power Driver. 2) Low VCE(sat) VCE(.
2SCR542P - Middle Power Transistors
(ROHM)
2SCR542P
Midium Power Transistors (30V / 5A)
Parameter
VCEO IC
Value
30V 5A
lFeatures
1)Low saturation voltage,typically VCE(sat)=400mV(Max.) (IC.
2SCR542PFRA - NPN Transistor
(ROHM)
22SSCCRR554422PPFRA
NPN 5.0A 30V Middle Power Transistor
Parameter
VCEO IC
Value
30V 5.0A
lFeatures 1) Suitable for Middle Power Driver 2) Compleme.
