MG6405WZ

Insulated Gate Bipolar Transistor

ROHM

Download Datasheet (455.65 KB)

MG6405WZ Datasheet Preview — Preview of MG6405WZ Datasheet

Datasheet Details

Part number:

MG6405WZ

Manufacturer:

ROHM ↗

File Size:

455.65 KB

Download:

📥 MG6405WZ Datasheet PDF

Description:

Insulated gate bipolar transistor.
MG6405WZ 650V 60A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible.
Chips per Wafer 650V 60A 1.5V 568pcs lFeatures 1) Trench Light Punch Through Type 2) Low Collect.

✔ MG6405WZ Features

1) Trench Light Punch Through Type 2) Low Collector - Emitter Saturation Voltage 3) High Speed Switching & Low Switching Loss 4) Short Circuit Withstand Time 2μs lOut

✔ MG6405WZ Application

), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM

📁 Related Datasheet

MG6401WZ - Insulated Gate Bipolar Transistor (ROHM)

MG6403WZ - Insulated Gate Bipolar Transistor (ROHM)

MG64F225 - MCU (Megawin)

MG64F237 - MCU (Megawin)

MG64P - 0.25m Embedded DRAM/ Customer Structured Arrays (OKI electronic componets)

MG600 - N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) (Toshiba)

MG600J1US51 - N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) (Toshiba)

MG600J2YS60A - TOSHIBA IGBT Module Silicon N Channel IGBT (Toshiba)

TAGS

MG6405WZ Insulated Gate Bipolar Transistor ROHM