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MG6307WZ Insulated Gate Bipolar Transistor

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Description

MG6307WZ 650V 25A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max.Possible Chips per Wafer 650V 25A 1.5V 1328pcs l.

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Datasheet Specifications

Part number
MG6307WZ
Manufacturer
ROHM ↗
File Size
455.40 KB
Datasheet
MG6307WZ-ROHM.pdf
Description
Insulated Gate Bipolar Transistor

Applications

* ), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific App

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