MG63P
OKI electronic componets
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0.25m embedded dram/ customer structured arrays. Oki’s 0.25 µm MG63P/64P/65P Application-Specific Integrated Circuit (ASIC) provides the ability to embed large blocks of Synchronous
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📁 Related Datasheet
MG6303WZ - Insulated Gate Bipolar Transistor
(ROHM)
MG6303WZ
650V 30A Insulated Gate Bipolar Transistor
VCES IC (Nominal) VCE(sat) (Typ.)
Max. Possible Chips per Wafer
650V 30A 1.5V 1137pcs
lFeatures.
MG6307WZ - Insulated Gate Bipolar Transistor
(ROHM)
MG6307WZ
650V 25A Insulated Gate Bipolar Transistor
VCES IC (Nominal) VCE(sat) (Typ.)
Max. Possible Chips per Wafer
650V 25A 1.5V 1328pcs
lFeatures.
MG6308WZ - Insulated Gate Bipolar Transistor
(ROHM)
MG6308WZ
650V 75A Insulated Gate Bipolar Transistor
VCES IC (Nominal) VCE(sat) (Typ.)
Max. Possible Chips per Wafer
650V 75A 1.5V 512pcs
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MG600 - N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
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High Power Switching Applications Motor Control Applications
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MG600J2YS61A - High Power Switching Applications Motor Control Applications
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MITSUBISHI IGBT Module
MG600J2YS61A
MG600J2YS61A(600V/600A 2in1)
High Power Switching Applications Motor Control Applications
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