B25N10 25A 100V N-channel Enhancement Mode Power MOSFET

B25N10 Description

25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 .
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge.

B25N10 Features

* Fast Switching
* Low ON Resistance(Rdson≤36mΩ)
* Low Gate Charge(Typical:61nC)
* Low Reverse Transfer Capacitances(Typical:84pF)
* 100% Single Pulse Avalanche Energy Test

B25N10 Applications

* Power switching applications
* LED Boost
* UPS power supply
* Load switch VDSS = 100V RDS(on) （TYP)= 30mΩ ID = 25A TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Value 25N1

📥 Download Datasheet

B25N10 Datasheet Preview — Preview of B25N10 PDF

Datasheet Details

Part number: B25N10
Manufacturer: ROUM
File Size: 1.21 MB
Datasheet: B25N10-ROUM.pdf
Description: 25A 100V N-channel Enhancement Mode Power MOSFET

📁 Related Datasheet

B25NM60N - N-channel Power MOSFET (STMicroelectronics)
B250 - 2 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Fuji Electric)
B250-C1000 - SILICON BRIDGE RECTIFIERS (EIC discrete Semiconductors)
B250-C1500R - SILICON BRIDGE RECTIFIERS (EIC discrete Semiconductors)
B250A - 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
B250AE - 2.0A SCHOTTKY BARRIER RECTIFIER (DIODES)
B250AF - 2.0A SCHOTTKY BARRIER RECTIFIER (DIODES)
B250AQ - SCHOTTKY BARRIER RECTIFIER (Diodes)

📌 All Tags

25A 100V N-channel Enhancement Mode Power MOSFET ROUM

ROUM B25N10-like datasheet