* .00 Aug 10, 2005 page 8 of 10 2SC5820 (VCE = 2 V, IC = 30 mA, ZO = 50 Ω) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000
2SC5820
Renesas ↗ Technology
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Silicon npn epitaxial type transistor.
2SC5820
Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator
REJ03G0758-0200 (Previous ADE-208-1604A) Rev.2.00 Aug.10.2005
Applicati.
📁 Related Datasheet
2SC5823 - NPN Triple Diffused Planar Silicon Transistor
(Sanyo Semicon Device)
Ordering number : ENN7785
2SC5823
NPN Triple Diffused Planar Silicon Transistor
2SC5823
Switching Regulator Applications
Features
• • • •
Package D.
2SC5824 - NPN TRANSISTOR
(Rohm)
2SC5824
Transistor
Power transistor (60V, 3A)
2SC5824
Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typ.
2SC5825 - NPN TRANSISTOR
(Rohm)
Power transistor (60V, 3A)
2SC5825
zFeatures
1) High speed switching. (Tf : Typ. : 30ns at IC = 3A)
2) Low saturation voltage, typically (Typ. : 200m.
2SC5826 - Power transistor
(Rohm)
2SC5826
Transistors
Power transistor (60V, 3A)
2SC5826
zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, ty.
2SC5827 - Silicon NPN Epitaxial Type Transistor
(Hitachi Semiconductor)
2SC5827
Silicon NPN Epitaxial VHF/UHF wide band amplifier
ADE–208–1464(Z) Rev.0 Nov. 2001 Features
• Super pact package: MFPAK (1.4 x 0.8 x 0.59 m.
2SC5828 - NPN TRANSISTOR
(Hitachi Semiconductor)
2SC5828
Silicon NPN Epitaxial VHF/UHF Wide band amplifier
ADE–208–1465(Z) Rev.0 Nov. 2001 Features
• Super pact package: MFPAK (1.4 x 0.8 x 0.59 m.
2SC5829 - Silicon NPN epitaxial planar type Transistor
(Panasonic Semiconductor)
Transistors
2SC5829
Silicon NPN epitaxial planar type
For high speed switching ■ Features
• Allowing the small current and low voltage operation • Hi.
2SC5800 - NPN SILICON RF TRANSISTOR
(Renesas)
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5800
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FE.
