2SK4150 N-Channel MOSFET

Renesas Technology

Description

Preliminary www.DataSheet4U.com Datasheet 2SK4150 Silicon N Channel MOS FET High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: 2SK4150
Manufacturer: Renesas ↗ Technology
File Size: 108.89 KB
Datasheet: 2SK4150_RenesasTechnology.pdf
Description: N-Channel MOSFET

Features

* Capable of 2.5 V gate drive
* Low drive current
* Low on-resistance RDS(on) = 4.0  typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25°C) REJ03G1909-0300 Rev.3.00 May 27, 2010 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) D G 3 2 1. Source 2. Drain 3. Gate 1 S Absolute

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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2SK4150 N-Channel MOSFET Renesas Technology

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