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2SK4106 - N-Channel MOSFET

2SK4106 Description

2SK4106 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4106 Switching Regulator Applications Unit: mm * *

2SK4106 Features

* an life, bodily injury, serious property damag

2SK4106 Applications

* Unit: mm
* Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ. ) High forward transfer admittance: |Yfs| = 8.5 S (typ. ) Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Rating

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N-Channel MOSFET Toshiba
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