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2SK4113 Datasheet - Toshiba

2SK4113 Silicon N-Channel MOSFET

2SK4113 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV) 2SK4113 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate volt.

2SK4113-Toshiba.pdf

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Datasheet Details

Part number:

2SK4113

Manufacturer:

Toshiba ↗

File Size:

210.29 KB

Description:

Silicon n-channel mosfet.

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2SK4113 2SK4113 Silicon N-Channel MOSFET Toshiba

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