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2SK4111 Datasheet - Toshiba

2SK4111 N-channel MOSFET

2SK4111 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4111 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20.

2SK4111 Datasheet (273.33 KB)

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Datasheet Details

Part number:

2SK4111

Manufacturer:

Toshiba ↗

File Size:

273.33 KB

Description:

N-channel mosfet.

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