. High Brakdwon Voltage : V(br)dss=450V
. High Forward Transfer Admittance : |Yf s |=1.2S (Typ.) . Low Leakage Current : lGSS =:t100nA(Max. ) @ Vgs=±20V
. Enhancement-
✔ 2SK419 Application
SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.
INDUSTRIAL APPLICATIONS Unit in mm
10.
2SK410, Hitachi Semiconductor
2SK410
Silicon N-Channel MOS FET
Application
HF/VHF power amplifier
Features
• • • • • • • High breakdown voltage You can decrease handling current..