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HAT1089C - Silicon P-Channel Power MOSFET

HAT1089C Description

HAT1089C Silicon P Channel MOS FET Power Switching REJ03G1227-0300 Rev.3.00 Jun.13, 2005 .

HAT1089C Features

* Low on-resistance RDS(on) = 79 mΩ typ. (at VGS =
* 4.5 V) www. DataSheet4U. com
* Low drive current.
* 2.5 V gate drive devices.
* High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DDD D 1. So

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Silicon P-Channel Power MOSFET Renesas Technology
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