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HAT2207C Silicon N-Channel Power MOSFET

HAT2207C Description

HAT2207C Silicon N Channel MOS FET Power Switching .

HAT2207C Features

* Low on-resistance RDS(on) = 100 mΩ typ. (at VGS = 4.5 V)
* Low drive current.
* High density mounting
* 2.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 3 2 1 REJ03G1239-0600 Rev.6.00 Feb 28, 2006 2

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Silicon N-Channel Power MOSFET Renesas Technology
Renesas Technology HAT2207C-like datasheet