HAT2200R, Renesas Technology
HAT2200R
Silicon N Channel Power MOS FET Power Switching
Features
• Capable of 8 V gate drive • Low drive current • High density mounting • Low on-re.
HAT2200WP, Renesas Technology
HAT2200WP
Silicon N Channel Power MOS FET Power Switching
Features
Capable of 8 V gate drive Low drive current High density mounting Low on-re.
HAT2201R, Renesas Technology
HAT2201R
Silicon N Channel Power MOS FET Power Switching
Features
• Capable of 8 V gate drive • Low drive current • High density mounting • Low on-re.
HAT2201WP, Renesas Technology
HAT2201WP
Silicon N Channel Power MOS FET Power Switching
Features
Capable of 8 V gate drive Low drive current High density mounting Low on-re.
HAT2202C, Renesas Technology
HAT2202C
Silicon N Channel MOS FET Power Switching
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REJ03G1236-0600 Rev.6.00 Oct 01, 2009
Features
• Low on-resistance RDS(on) =.
HAT2203C, Renesas Technology
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HAT2203C
Silicon N Channel MOS FET Power Switching
REJ03G0447-0400 Rev.4.00 May 19.2005
Features
• Low on-resistance RDS(on) = 6.
HAT2204C, Renesas Technology
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HAT2204C
Silicon N Channel MOS FET Power Switching
REJ03G0448-0500 Rev.5.00 May 10, 2007
Features
• Low on-resistance RDS(on) = .
HAT2205C, Renesas Technology
HAT2205C
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS (on) = 38 mΩ typ. (at VGS = 4.5 V)
• Low drive current. • High de.
