HAT2218R Datasheet - Renesas Technology

datasheet Preview Page 1 from Datasheet4u.com

HAT2218R Silicon N-Channel Power MOSFET

www.DataSheet4U.com HAT2218R Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G0396-0300 Rev.3.00 Aug.23.2.

HAT2218R_RenesasTechnology.pdf

HAT2218R Datasheet Preview — Preview of HAT2218R PDF

Datasheet Details

Part number:

HAT2218R

Manufacturer:

Renesas ↗ Technology

File Size:

165.20 KB

Description:

Silicon N-Channel Power MOSFET

Features

* Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode Outline SOP-8 7 8 D1 D1 5 6 S1/D2 S1/D2 8 2 G1 4 G2 5 7 6 3 1 2 4 S1/D2(kelvin) 1 S2 3 MOS1 MOS2 and Schottky Barrier Diode Absolute Maximum Ratings (Ta

HAT2218R Distributors

📁 Related Datasheet

HAT2201RJ HAT200-S HAT2016R HAT2019R HAT2020R HAT2022R

📌 All Tags

HAT2218R Silicon N-Channel Power MOSFET Renesas Technology

Renesas Technology HAT2218R-like datasheet