HAT2210R Silicon N-Channel Power MOSFET

Renesas Technology

Description

Data Sheet HAT2210R Silicon N Channel Power MOSFET with Schottky Barrier Diode High Speed Power Switching R07DS1368EJ0301 Rev.3.01 Jan 20, 2017 Feat.

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Datasheet Specifications

Part number: HAT2210R
Manufacturer: Renesas ↗ Technology
File Size: 177.30 KB
Datasheet: HAT2210R_RenesasTechnology.pdf
Description: Silicon N-Channel Power MOSFET

Features

* Low on-resistance
* Capable of 4.5 V gate drive
* High density mounting
* Built-in Schottky Barrier Diode Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 8765 78 DD 56 DD 1234 2 4 G G 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain S 1 MOS1 S 3 MOS

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HAT2210R Silicon N-Channel Power MOSFET Renesas Technology

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