* Low on-resistance
* Capable of 4.5 V gate drive
* High density mounting
* Built-in Schottky Barrier Diode Outline RENESAS Package code: PWSN0008DB-A (Package name: WPAK-D) 5 678 2 G1 4 32 1 78 D1 D1 56 S1/D2 S1/D2 4 G2 S1/D2(kelvin) 1 MOS1 S2 3 MOS2 and Schottky Barrier Diode
HAT2285WP Datasheet (120.36 KB)
HAT2285WP
Renesas ↗ Technology
120.36 KB
Silicon n-channel power mosfet.
Preliminary Datasheet
HAT2285WP
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
REJ03G1371-0310 Rev.3.10
M.
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