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HAT2282C Silicon N-Channel Power MOSFET

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Description

HAT2282C Silicon N Channel MOS FET Power Switching .

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Features

* Low on-resistance RDS(on) = 173 mΩ typ. (at VGS = 4.5 V)
* Low drive current
* High density mounting
* 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 3 2 1 REJ03G1329-0100 Rev.1.00 Jan 26, 2006 23 45

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Silicon N-Channel Power MOSFET Renesas Technology
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