HM62V8100I Datasheet - Renesas Technology

HM62V8100I Wide Temperature Range Version 8 M SRAM (1024-kword x 8-bit)

The Hitachi HM62V8100I Series is 8-Mbit static RAM organized 1,048,576-word × 8-bit. HM62V8100I Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It offers low power standby power dissipation; therefore, it is suitable for batte.

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other H.

HM62V8100I Features

* Single 3.0 V supply: 2.7 V to 3.6 V Fast access time: 55 ns (Max) Power dissipation:  Active: 6.0 mW/MHz (Typ)  Standby: 1.5 µW (Typ) Completely static memory.  No clock or timing strobe required Equal access and cycle times Common data input and output.  Three stat

HM62V8100I Datasheet (110.64 KB)