Datasheet Specifications
- Part number
- M6MGD13TW66CWG-P
- Manufacturer
- Renesas ↗ Technology
- File Size
- 150.94 KB
- Datasheet
- M6MGD13TW66CWG-P_RenesasTechnology.pdf
- Description
- CMOS FLASH MEMORY
Description
www.DataSheet4U.com Preliminary Notice: This is not a final specification.Some parametric limits are subject to change.Renesas LSIs M6MGD13TW66CW.Features
* Access Time Random Access/ Page Access Flash Mobile RAM Supply Voltage 70ns /25ns (Max. ) 85ns /25ns (Max. ) FM-VCC=2.7 ~ 3.0V Ta= -40 ~ 85 degree 72pin S-CSP, Ball pitch 0.80mm Outer-ball:Sn-Pb Ambient Temperature 64M-bit Mobile RAM is a 4,194,304 words high density RAM Package fabricated by CMOS teM6MGD13TW66CWG-P Distributors
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