M6MGD13TW66CWG-P - CMOS FLASH MEMORY

Name: M6MGD13TW66CWG-P
SKU: M6MGD13TW66CWG-P-566217

Renesas Technology

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Datasheet Details

Part number	M6MGD13TW66CWG-P
Manufacturer	Renesas Technology
File Size	150.94 KB
Description	CMOS FLASH MEMORY
Datasheet	M6MGD13TW66CWG-P_RenesasTechnology.pdf

M6MGD13TW66CWG-P Product details

Description

The M6MGD13TW66CWG-P is a Stacked Chip Scale Package (S-CSP) that contents 128M-bit Flash memory and 64M-bit Mobile RAM in a 72-pin Stacked CSP with leaded solder ball.

Features

Access Time Random Access/ Page Access Flash Mobile RAM Supply Voltage 70ns /25ns (Max. ) 85ns /25ns (Max. ) FM-VCC=2.7 ~ 3.0V Ta= -40 ~ 85 degree 72pin S-CSP, Ball pitch 0.80mm Outer-ball:Sn-Pb Ambient Temperature 64M-bit Mobile RAM is a 4,194,304 words high density RAM Package fabricated by CMOS technology for the peripheral circuit and DRAM cell for the memory array. The interface is compatible to an asynchronous SRAM. The cells are automatically refreshed and the refresh control is Applicatio.

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Published: Dec 31, 2006 |