Datasheet4U Logo Datasheet4U.com

M6MGD13TW66CWG-P

CMOS FLASH MEMORY

M6MGD13TW66CWG-P Features

* Access Time Random Access/ Page Access Flash Mobile RAM Supply Voltage 70ns /25ns (Max.) 85ns /25ns (Max.) FM-VCC=2.7 ~ 3.0V Ta= -40 ~ 85 degree 72pin S-CSP, Ball pitch 0.80mm Outer-ball:Sn-Pb Ambient Temperature 64M-bit Mobile RAM is a 4,194,304 words high density RAM Package fabricated by CMOS te

M6MGD13TW66CWG-P General Description

The M6MGD13TW66CWG-P is a Stacked Chip Scale Package (S-CSP) that contents 128M-bit Flash memory and 64M-bit Mobile RAM in a 72-pin Stacked CSP with leaded solder ball. 128M-bit Flash memory is a 8,388,608 words, single power supply and high performance non-volatile memory fabricated by CMOS technol.

M6MGD13TW66CWG-P Datasheet (150.94 KB)

Preview of M6MGD13TW66CWG-P PDF

Datasheet Details

Part number:

M6MGD13TW66CWG-P

Manufacturer:

Renesas ↗ Technology

File Size:

150.94 KB

Description:

Cmos flash memory.
www.DataSheet4U.com Preliminary Notice: This is not a final specification. Some parametric limits are subject to change. Renesas LSIs M6MGD13TW66CW.

📁 Related Datasheet

M6MGD13TW34DWG - CMOS FLASH MEMORY (Renesas Technology)
.. RENESAS LSIs M6MGD13TW34DWG 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-.

M6MGD137W34DWG - CMOS FLASH MEMORY (Renesas Technology)
.. Renesas LSIs RENESAS CONFIDENTIAL M6MGD137W34DWG Stacked-CSP ( Chip Scale Package) 134,217,728-BIT (8,388,608-WORD BY 16-BIT) .

M6MGB160S2BVP - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP (Mitsubishi)
M6MGB/T160S2BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (131,072-WORD BY 16-B.

M6MGB160S4BVP - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP (Mitsubishi)
MITSUBISHI LSIs M6MGB/T160S4BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262.

M6MGB162S2BVP - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP (Mitsubishi)
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (262,144-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Pack.

M6MGB162S4BVP - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP (Mitsubishi)
M6MGB/T162S4BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP .

M6MGB166S2BWG - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP (Mitsubishi)
MITSUBISHI LSIs M6MGB/T166S2BWG 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS.

M6MGB166S4BWG - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP (Mitsubishi)
MITSUBISHI LSIs M6MGB/T166S4BWG 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS.

TAGS

M6MGD13TW66CWG-P CMOS FLASH MEMORY Renesas Technology

Image Gallery

M6MGD13TW66CWG-P Datasheet Preview Page 2 M6MGD13TW66CWG-P Datasheet Preview Page 3

M6MGD13TW66CWG-P Distributor