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M6MGB166S4BWG

CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP

M6MGB166S4BWG Features

* Access time Flash Memory 90ns (Max.) SRAM 85ns (Max.)

* Supply voltage Vcc=2.7 ~ 3.6V

* Ambient temperature I version Ta=-40 ~ 85°C

* Package : 72-pin S-CSP , 0.8mm ball pitch APPLICATION Mobile communication products PIN CONFIGURATION (TOP VIEW) INDEX (Laser Mark

M6MGB166S4BWG General Description

The MITSUBISHI M6MGB/T166S4BWG is a Stacked Chip Scale Package (S-CSP) that contents 16M-bits flash memory and 4M-bits Static RAM in a 72-pin S-CSP. 16M-bits Flash memory is a 1,048,576 words, 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circui.

M6MGB166S4BWG Datasheet (253.58 KB)

Preview of M6MGB166S4BWG PDF

Datasheet Details

Part number:

M6MGB166S4BWG

Manufacturer:

Mitsubishi

File Size:

253.58 KB

Description:

Cmos 3.3v-only flash memory & cmos sram stacked-csp.
MITSUBISHI LSIs M6MGB/T166S4BWG 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS.

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M6MGB166S4BWG CMOS 3.3V-ONLY FLASH MEMORY CMOS SRAM Stacked-CSP Mitsubishi

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