* Access Time Flash SRAM 85ns (Max.) 85ns (Max.) F-VCC =VCC=2.7 ~ 3.6V Ta=-40 ~ 85 °C 66 pin S-CSP Ball pitch 0.80mm Supply Voltage Ambient Temperature Package Application Mobile communication products PIN CONFIGURATION (TOP VIEW) INDEX(Laser Marking) A B C D NC NC NC A5 A4 A0 F-CE# F-A18 S-LB#
M6MGB32BS4WG Datasheet (93.15 KB)
M6MGB32BS4WG
93.15 KB
Cmos sram.
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Renesas LSIs
M6MGB/T32BS4WG
33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS FLASH MEMORY 4,194,304-BIT (262,144-WORD BY 16-BIT) C.
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Renesas LSIs
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Preliminary
Notice: This is not a final specification. Some parametric limits are subject to change.
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Notice: This is not a final specification. Some parametric limits are subject to change.
Renesas LSIs
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