M6MGB331S4BKT Features
* 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and Access Time DINOR (Divided bit-line NOR) architecture for the memory cell. 4M-bit SRAM is a 524,288 bytes / 262,144 words asynchronous SRAM fabricated by silicon-gate CMOS technology. M6M
Datasheet Details
M6MGB331S4BKT, M6MGT331S4BKT
158.58 KB
Cmos sram.
This datasheet PDF includes multiple part numbers: M6MGB331S4BKT, M6MGT331S4BKT.
Please refer to the document for exact specifications by model.
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M6MGB331S4BKT Distributor
