* 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and Access Time DINOR (Divided bit-line NOR) architecture for the memory cell. 4M-bit SRAM is a 524,288 bytes / 262,144 words asynchronous SRAM fabricated by silicon-gate CMOS technology. M6M
M6MGB331S4BKT Datasheet (158.58 KB)
M6MGB331S4BKT
158.58 KB
Cmos sram.
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Preliminary
Notice: This is not a final specification. Some parametric limits are subject to change.
Renesas LSIs
M6MGB/T331S4B.
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