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M6MGB33BS8BWG-P

CMOS SRAM

M6MGB33BS8BWG-P Features

* Access Time Flash SRAM 70ns (Max.) 85ns (Max.) F-VCC =VCC=2.7 ~ 3.0V Ta=-40 ~ 85 °C 66 pin S-CSP Ball pitch 0.80mm Outer-ball: Sn - Pb Supply Voltage Ambient Temperature Package Application Mobile communication products PIN CONFIGURATION (TOP VIEW) INDEX(Laser Marking) A B C D E NC NC NC A5 A4

M6MGB33BS8BWG-P General Description

The M6MGB/T33BS8BWG-P is a Stacked Chip Scale Package (S-CSP) that contents 32M-bit Flash memory and 8M-bit SRAM in a 66-pin Stacked CSP with leaded solder ball. 32M-bit Flash memory is a 2,097,152 words, single power supply and high performance non-volatile memory fabricated by CMOS technology for .

M6MGB33BS8BWG-P Datasheet (97.79 KB)

Preview of M6MGB33BS8BWG-P PDF

Datasheet Details

Part number:

M6MGB33BS8BWG-P

Manufacturer:

Renesas ↗

File Size:

97.79 KB

Description:

Cmos sram.
www.DataSheet4U.com Preliminary Notice: This is not a final specification. Some parametric limits are subject to change. Renesas LSIs M6MGB/T33BS8B.

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M6MGB33BS8BWG-P CMOS SRAM Renesas

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