M6MGB33BS8BWG-P Datasheet, Sram, Renesas

✔ M6MGB33BS8BWG-P Features

Access Time Flash SRAM 70ns (Max.) 85ns (Max.) F-VCC =VCC=2.7 ~ 3.0V Ta=-40 ~ 85 °C 66 pin S-CSP Ball pitch 0.80mm Outer-ball: Sn - Pb Supply Voltage Ambient Temperature

Renesas manufacturer logo

M6MGB33BS8BWG-P

97.79 KB

Cmos sram. The M6MGB/T33BS8BWG-P is a Stacked Chip Scale Package (S-CSP) that contents 32M-bit Flash memory and 8M-bit SRAM in a 66-pin Stacked

📁 Related Datasheet

M6MGB33BS8BWG - CMOS SRAM (Renesas)

M6MGB33BS8AWG-P - CMOS SRAM (Renesas)

M6MGB331S4BKT - CMOS SRAM (Renesas)

M6MGB331S8AKT - CMOS SRAM (Renesas)

M6MGB331S8BKT - CMOS SRAM (Renesas)

M6MGB321S4TP - CMOS SRAM (Renesas)

M6MGB321S8TP - CMOS SRAM (Renesas)

M6MGB32BS4WG - CMOS SRAM (Renesas)

TAGS

M6MGB33BS8BWG-P CMOS SRAM Renesas