* Access Time Flash SRAM 85ns (Max.) 85ns (Max.) F-VCC =VCC=2.7 ~ 3.0V Ta=-40 ~ 85 °C 66 pin S-CSP Ball pitch 0.80mm Supply Voltage Ambient Temperature Package Application Mobile communication products PIN CONFIGURATION (TOP VIEW) INDEX(Laser Marking) A B C D NC NC NC A5 A4 A0 F-CE# NC NC A18 A
M6MGB32BS8WG Datasheet (92.95 KB)
M6MGB32BS8WG
92.95 KB
Cmos sram.
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Renesas LSIs
M6MGB/T32BS8WG
33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS FLASH MEMORY 8,388,608-BIT (524,288-WORD BY 16-BIT) C.
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Renesas LSIs
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Notice: This is not a final specification. Some parametric limits are subject to change.
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Notice: This is not a final specification. Some parametric limits are subject to change.
Renesas LSIs
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