R2J20651ANP Datasheet - Renesas Technology

MOSFET

R2J20651ANP Features

* Compliant with Intel 6 × 6 DrMOS specification Built-in power MOS FET suitable for applications with 5 V/12 V input Built-in driver circuit which matches the po

R2J20651ANP General Description

The R2J20651ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip also incorporates .

R2J20651ANP Datasheet (263.66 KB)